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M93C76-RDW3TP/K

M93C76-RDW3TP/K

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STMicroelectronics

EEPROM SERIAL-MICROWIRE 8K-BIT 1K X 8/512 X 16 2.5V/3.3V/5V 8-PIN TSSOP T/R

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M93C76-RDW3TP/K

M93C76-RDW3TP/K

Active
STMicroelectronics

EEPROM SERIAL-MICROWIRE 8K-BIT 1K X 8/512 X 16 2.5V/3.3V/5V 8-PIN TSSOP T/R

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Description

General part information

M93C76-A125 Series

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are Electrically Erasable PROgrammable Memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).

The M93Cx6-A125 devices operate within a voltage supply range from 1.8 V to 5.5 V

The M93Cx6-A125 devices are guaranteed over the -40 °C/+125 °C temperature range and are compliant with the Automotive standard AEC-Q100 Grade 1.

Technical Specifications

Parameters and characteristics for this part

SpecificationM93C76-RDW3TP/K
Clock Frequency2 MHz
GradeAutomotive
Memory Depth (Option 1)512
Memory Depth (Option 2)256
Memory FormatEEPROM
Memory Interface (Type)Microwire
Memory Organization256 x 16, 512 x 8
Memory Size1 KB, 4 Kbit
Memory TypeNon-Volatile
Memory Width (Option 1)8 bit
Memory Width (Option 2)16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
QualificationAEC-Q100
TechnologyEEPROM
Voltage - Supply (Maximum)5.5 V
Voltage - Supply (Minimum)1.8 V
Write Cycle Time - Page5 ms
Write Cycle Time - Word5 ms

Pricing

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CAD

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