Specification	SSM3K302T(TE85L,F)

Current - Continuous Drain (Id) (Ta)	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4 V
FET Type	N-Channel
Gate Charge (Max)	4.3 nC
Input Capacitance (Ciss) (Max)	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TSM
Power Dissipation (Max)	700 mW
Rds On (Max)	71 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

SSM3K302 Series

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	FET Type	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Package / Case
Toshiba Semiconductor and Storage SSM3K302T(TE85L,F)	30 V	150 °C	4.3 nC	700 mW	71 mOhm	1.8 V	4 V	TSM	N-Channel	12 V	MOSFET (Metal Oxide)	270 pF	Surface Mount	3 A	SC-59 SOT-23-3 TO-236-3

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