AUIRFR8403

Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFR8403

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC
Input Capacitance (Ciss) (Max) @ Vds	3171 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	99 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Power Dissipation (Max)	FET Type	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies AUIRFR8403TRL	99 nC	100 A	40 V	3.1 mOhm	3.9 V	20 V	MOSFET (Metal Oxide)	99 W	N-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	-55 °C	175 ░C	10 V	3171 pF
Infineon Technologies AUIRFR8403	99 nC	100 A	40 V	3.1 mOhm	3.9 V	20 V	MOSFET (Metal Oxide)	99 W	N-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	-55 °C	175 ░C	10 V	3171 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 100A (Tc) 99W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources

No documents available