ZTX855

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Diodes Inc

TRANS NPN 150V 4A E-LINE

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Diodes Inc

TRANS NPN 150V 4A E-LINE

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX855

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	90 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1.2 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	260 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

Part	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Mounting Type	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package
Diodes Inc ZTX855STOB	4 A	260 mV	50 nA	100 hFE	90 MHz	1.2 W	Through Hole	NPN	-55 °C	200 C	E-Line-3	150 V	E-Line (TO-92 compatible)
Diodes Inc ZTX855	4 A	260 mV	50 nA	100 hFE	90 MHz	1.2 W	Through Hole	NPN	-55 °C	200 C	E-Line-3	150 V	E-Line (TO-92 compatible)
Diodes Inc ZTX855STZ	4 A	260 mV	50 nA	100 hFE	90 MHz	1.2 W	Through Hole	NPN	-55 °C	200 C	E-Line-3	150 V	E-Line (TO-92 compatible)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 150 V 4 A 90MHz 1.2 W Through Hole E-Line (TO-92 compatible)