TIP35C

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 3 MHZ, 125 W, 25 A, 50 ROHS COMPLIANT: YES

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Active

STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 3 MHZ, 125 W, 25 A, 50 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TIP35C

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Supplier Device Package	TO-247-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Complementary power transistors

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Supplier Device Package	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
STMicroelectronics TIP35C	3 MHz	10 hFE	NPN	TO-247-3	150 °C	Through Hole	100 V	1 mA	TO-247-3	25 A	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications.

Technical documentation and resources