BC849BE6327HTSA1

Obsolete

Infineon Technologies

TRANS NPN 30V 0.1A SOT23

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Obsolete

Infineon Technologies

TRANS NPN 30V 0.1A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BC849BE6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Transistor Type	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
Infineon Technologies BC849BE6327HTSA1	NPN	PG-SOT23	SC-59 SOT-23-3 TO-236-3	600 mV	200	150 °C	Surface Mount	100 mA	330 mW	30 V	250 MHz	15 nA
Infineon Technologies BC849CWE6327HTSA1	NPN	PG-SOT323	SC-70 SOT-323	600 mV	420	150 °C	Surface Mount	100 mA	250 mW	30 V	250 MHz	15 nA
Infineon Technologies BC849CE6327HTSA1	NPN	PG-SOT23	SC-59 SOT-23-3 TO-236-3	600 mV	420	150 °C	Surface Mount	100 mA	330 mW	30 V	250 MHz	15 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources