PMN70EPEX

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Nexperia USA Inc.

MOSFETS 20 V, P-CHANNEL TRENCH MOSFET

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PMN70EPEX

Active

Nexperia USA Inc.

MOSFETS 20 V, P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMN70 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMN70EPEX

Current - Continuous Drain (Id) (Ta)	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	11.5 nC
Input Capacitance (Ciss) (Max)	370 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-74, SOT-457
Package Name	6-TSOP
Power Dissipation (Max)	6.25 W, 570 mW
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

PMN70 Series

20 V, P-channel Trench MOSFET

Part	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max)	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PMN70XPX	SC-74 SOT-457	-55 °C	150 °C	88 mOhm	Surface Mount	4.46 W 530 mW	900 mV	7.5 nC	6-TSOP	20 V	MOSFET (Metal Oxide)	550 pF	12 V	3.1 A	P-Channel	4.5 V	1.5 V
Nexperia USA Inc. PMN70EPEX	SC-74 SOT-457	-55 °C	150 °C	80 mOhm	Surface Mount	6.25 W 570 mW	3 V	11.5 nC	6-TSOP	30 V	MOSFET (Metal Oxide)	370 pF	20 V	4.4 A	P-Channel	10 V	4.5 V