UG1004GH

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 10A TO220AB

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	UG1004GH

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	22 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Speed	Package / Case	Reverse Recovery Time (trr)	Grade	Qualification
Taiwan Semiconductor Corporation UG1004G	Through Hole	Standard	950 mV	1 Pair Common Cathode	10 µA	TO-220AB	200 V	175 ░C	-55 C	10 A	200 mA 500 ns	TO-220-3	22 ns
Taiwan Semiconductor Corporation UG1004GH	Through Hole	Standard	950 mV	1 Pair Common Cathode	10 µA	TO-220AB	200 V	175 ░C	-55 C	10 A	200 mA 500 ns	TO-220-3	22 ns	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 10A Through Hole TO-220-3

Technical documentation and resources

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