IPP14N03LA

Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP14N03LA

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1043 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	46 W
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPP14N03LA	8.3 nC	20 V	25 V	MOSFET (Metal Oxide)	N-Channel	1043 pF	-55 °C	175 ░C	2 V	30 A	Through Hole	PG-TO220-3	46 W	TO-220-3	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole PG-TO220-3

Technical documentation and resources