STH175N4F6-2AG

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 40V 120A 3-PIN H2PAK T/R

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STH175N4F6-2AG

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 40V 120A 3-PIN H2PAK T/R

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STH175N4F6-2AG

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	2.4 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

STH175 Series

Part	Grade	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Qualification	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STH175N4F6-2AG	Automotive	4.5 V	150 W	20 V	10 V	N-Channel	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	H2Pak-2	40 V	130 nC	Surface Mount	MOSFET (Metal Oxide)	7735 pF	120 A	2.4 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.07
		10	$ 1.72
		100	$ 1.37
		500	$ 1.16
	Digi-Reel®	1	$ 2.07
		10	$ 1.72
		100	$ 1.37
		500	$ 1.16
	Tape & Reel (TR)	1000	$ 0.98
		2000	$ 0.93
		5000	$ 0.90
		10000	$ 0.87

Description

General part information

STH175 Series

These devices are N-channel Power MOSFETs developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on)in all packages.Designed for automotive applications and AEC-Q101 qualifiedVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss

Documents

Technical documentation and resources

No documents available