IXFX90N20Q

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IXYS

MOSFET N-CH 200V 90A PLUS247-3

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IXYS

MOSFET N-CH 200V 90A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX90N20Q

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id [Max]	Mounting Type	Power Dissipation (Max)
IXYS IXFX90N20Q	-55 °C	150 °C	PLUS247™-3	190 nC	200 V	MOSFET (Metal Oxide)	10 V	22 mOhm	6800 pF	TO-247-3 Variant	90 A	20 V	N-Channel	4 V	Through Hole	500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 90A (Tc) 500W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available