
FM25V20A-DG
ActiveFERROELECTRIC RAM (FRAM), 2 MBIT, 256K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, DFN-8
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FM25V20A-DG
ActiveFERROELECTRIC RAM (FRAM), 2 MBIT, 256K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, DFN-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM25V20A-DG |
|---|---|
| Clock Frequency | 40 MHz |
| Memory Format | FRAM |
| Memory Interface | SPI |
| Memory Organization [custom] | 256 K |
| Memory Organization [custom] | 8 |
| Memory Size | 2 Gbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x6) |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2 V |
Pricing
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Description
General part information
FM25V20 Series
FM25V20A-DG is a 2-Mbit (256K × 8) serial (SPI) F-RAM memory. It is a 2-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The FM25V20A is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25V20A ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25V20A provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.
Documents
Technical documentation and resources