FF800R17KE3NOSA1

NRND

Infineon Technologies

THE FF800R17KE3 IS A DUAL IGBT3 - E3 MODULE IN A IHM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 800 A.

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NRND

Infineon Technologies

THE FF800R17KE3 IS A DUAL IGBT3 - E3 MODULE IN A IHM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 800 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FF800R17KE3NOSA1

Configuration	2 Independent
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	72 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	4450 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Configuration	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	NTC Thermistor	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input	Supplier Device Package	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
Infineon Technologies FF800R17KF6CB2NOSA1	2 Independent	52 nF	1700 V	Chassis Mount		125 °C	-40 °C	3.1 V	1.5 mA	Standard	Module	Module	6250 W
Infineon Technologies FF800R17KE3NOSA1	2 Independent	72 nF	1700 V	Chassis Mount		125 °C	-40 °C	2.45 V		Standard	Module	Module	4450 W	5 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IHM1700 V, 800 A 130 mm dualIGBT Modulewith IGBT3 - The best solution for your industry applications

Technical documentation and resources