STU7N65M6

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STMicroelectronics

MOSFET N-CH 650V 5A IPAK

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STMicroelectronics

MOSFET N-CH 650V 5A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU7N65M6

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	990 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.75 V

MOSFET N-CH 650V 5A IPAK

Part	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type
STMicroelectronics STU7N65M6	3.75 V	IPAK, TO-251-3 Short Leads, TO-251AA	60 W	N-Channel	6.9 nC	-55 °C	150 °C	5 A	220 pF	MOSFET (Metal Oxide)	IPAK	990 mOhm	10 V	25 V	650 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 5A (Tc) 60W (Tc) Through Hole IPAK

Technical documentation and resources

No documents available