Technical Specifications
Parameters and characteristics for this part
| Specification | L6571BD |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 170 mA |
| Current - Peak Output (Source, Sink) [custom] | 270 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | RC Input Circuit |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 16.6 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6571 Series
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external n-channel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross-conduction of the power devices.
Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25µs and 0.72µs (typ.)