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STS8N6LF6AG - STMICROELECTRONICS M95128-DRMN3TP/K

STS8N6LF6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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Search across all available documentation for this part.

DocumentsUM1575AN4337+14
STS8N6LF6AG - STMICROELECTRONICS M95128-DRMN3TP/K

STS8N6LF6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

Deep-Dive with AI

DocumentsUM1575AN4337+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS8N6LF6AG
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.92
10$ 0.75
100$ 0.58
500$ 0.49
1000$ 0.40
Digi-Reel® 1$ 0.92
10$ 0.75
100$ 0.58
500$ 0.49
1000$ 0.40
Tape & Reel (TR) 2500$ 0.38
5000$ 0.36
12500$ 0.34
25000$ 0.34
NewarkEach (Supplied on Cut Tape) 1$ 1.13
10$ 1.05
25$ 0.96
50$ 0.87
100$ 0.77
250$ 0.71
500$ 0.65
1000$ 0.61

Description

General part information

STS8N6LF6AG Series

This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.