IPS70R900P7SAKMA1

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Infineon Technologies

MOSFET N-CH 700V 6A TO251-3

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LTB

Infineon Technologies

MOSFET N-CH 700V 6A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS70R900P7SAKMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	211 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	30.5 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPS70R900P7SAKMA1	3.5 V	Through Hole	30.5 W	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	150 °C	-40 °C	PG-TO251-3	700 V	900 mOhm	16 V	10 V	6 A	MOSFET (Metal Oxide)	211 pF	6.8 nC

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General part information

N-Channel 700 V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3

Technical documentation and resources