DMP1045UFY4-7

Active

Diodes Inc

MOSFET, P-CH, 12V, 5.5A, X2-DFN2015 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Active

Diodes Inc

MOSFET, P-CH, 12V, 5.5A, X2-DFN2015 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1045UFY4-7

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	23.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1291 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	DFN2015H4-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

P-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Diodes Inc DMP1045UFY4-7	5.5 A	1 V	1.8 V 4.5 V	700 mW	8 V	P-Channel	Surface Mount	1291 pF	23.7 nC	3-XFDFN	DFN2015H4-3	32 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources