BCR119SH6433XTMA1

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Infineon Technologies

TRANS PREBIAS 2NPN 50V SOT363

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Unknown

Infineon Technologies

TRANS PREBIAS 2NPN 50V SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR119SH6433XTMA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Transistor Type	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
Infineon Technologies BCR119SH6327XTSA1	100 mA	150 MHz	300 mV	6-VSSOP SC-88 SOT-363	50 V	PG-SOT363-PO	120	4.7 kOhms	2 NPN - Pre-Biased (Dual)	Surface Mount	250 mW
Infineon Technologies BCR119WH6327XTSA1	100 mA	150 MHz	300 mV	SC-70 SOT-323	50 V	PG-SOT323	120	4.7 kOhms	NPN - Pre-Biased	Surface Mount	250 mW	100 nA
Infineon Technologies BCR119SH6433XTMA1	100 mA	150 MHz	300 mV	6-VSSOP SC-88 SOT-363	50 V	PG-SOT363-PO	120	4.7 kOhms	2 NPN - Pre-Biased (Dual)	Surface Mount	250 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources