1N4937T/R

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EIC Semiconductor

DIODE GEN PURP 600V 1A DO41

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EIC Semiconductor

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4937T/R

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

DIODE GEN PURP 600V 1A DO41

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
EIC Semiconductor 1N4937T/R	Through Hole	150 °C	-65 C	1.2 V	Standard	200 mA, 500 ns	DO-41	Axial, DO-204AL, DO-41	600 V	15 pF	1 A	5 µA	150 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	5000	$ 0.04

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources