TK15A50D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 15A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 15A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK15A50D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK15A50D(STA4,Q,M)	300 mOhm	TO-220-3 Full Pack	2300 pF	Through Hole	N-Channel	30 V	TO-220SIS	40 nC	10 V	50 W	15 A	MOSFET (Metal Oxide)	150 °C	500 V

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General part information

N-Channel 500 V 15A (Ta) 50W (Tc) Through Hole TO-220SIS

Technical documentation and resources