SSM3K324R,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT-23F

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT-23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K324R,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	55 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM3K324R,LF	30 V	55 mOhm	MOSFET (Metal Oxide)	1.8 V 4.5 V	N-Channel	1 W	150 °C	12 V	190 pF	SOT-23F	SOT-23-3 Flat Leads	Surface Mount	4 A

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General part information

N-Channel 30 V 4A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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