Technical Specifications
Parameters and characteristics for this part
| Specification | PD57030S-E |
|---|---|
| Current - Test | 50 mA |
| Current Rating (Amps) | 4 A |
| Frequency | 945 MHz |
| Gain | 14 dBi |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Power - Output | 30 W |
| Supplier Device Package | PowerSO-10RF (Straight Lead) |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PD57030-E Series
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
Documents
Technical documentation and resources