MMST6427-7-F

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 40V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 40V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	MMST6427-7-F

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20000
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	200 mW
Supplier Device Package	SOT-323
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Diodes Inc MMST6427-7	1 µA	-55 °C	150 °C	20000	500 mA	SOT-323	200 mW	1.5 V	SC-70 SOT-323	40 V	Surface Mount
Diodes Inc MMST6427-7-F	1 µA	-55 °C	150 °C	20000	500 mA	SOT-323	200 mW	1.5 V	SC-70 SOT-323	40 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

40V Darlington Transistor

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching

Technical documentation and resources