IXFP6N120P

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IXYS

MOSFET N-CH 1200V 6A TO220AB

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IXYS

MOSFET N-CH 1200V 6A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP6N120P

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	2830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFP6N120P	Through Hole	2830 pF	6 A	1200 V	TO-220-3	10 V	TO-220-3	MOSFET (Metal Oxide)	250 W	30 V	92 nC	N-Channel	2.4 Ohm	-55 °C	150 °C

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General part information

N-Channel 1200 V 6A (Tc) 250W (Tc) Through Hole TO-220-3

Technical documentation and resources