Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | BULD741T4 | BULD741 Series |
---|---|---|
- | - | |
Current - Collector (Ic) (Max) [Max] | 2.5 A | 2.5 A |
Current - Collector Cutoff (Max) [Max] | 250 µA | 250 µA |
DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 | 25 |
Mounting Type | Surface Mount | Surface Mount |
Operating Temperature | 150 °C | 150 °C |
Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
Power - Max [Max] | 30 W | 30 W |
Supplier Device Package | DPAK | DPAK |
Transistor Type | NPN | NPN |
Vce Saturation (Max) @ Ib, Ic | 1.5 V | 1.5 V |
Voltage - Collector Emitter Breakdown (Max) | 400 V | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Cut Tape (CT) | 1 | $ 1.06 | |
10 | $ 0.87 | |||
100 | $ 0.68 | |||
500 | $ 0.57 | |||
1000 | $ 0.47 | |||
Digi-Reel® | 1 | $ 1.06 | ||
10 | $ 0.87 | |||
100 | $ 0.68 | |||
500 | $ 0.57 | |||
1000 | $ 0.47 | |||
Tape & Reel (TR) | 2500 | $ 0.44 | ||
5000 | $ 0.42 | |||
12500 | $ 0.40 | |||
25000 | $ 0.40 |
BULD741 Series
High voltage fast-switching NPN power transistor
Part | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Mounting Type | Package / Case | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type |
---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BULD741T4 | 1.5 V | 150 °C | 30 W | 250 µA | DPAK | 2.5 A | Surface Mount | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 400 V | 25 | NPN |
STMicroelectronics BULD741T4 |
Description
General part information
BULD741 Series
The BULD741T4 is manufactured using high voltage multi-epitaxial planar technology to enhance switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Documents
Technical documentation and resources