IXTT2N300P3HV
ActivePOWER MOSFET, N CHANNEL, 3 KV, 2 A, 21 OHM, TO-268HV, SURFACE MOUNT
IXTT2N300P3HV
ActivePOWER MOSFET, N CHANNEL, 3 KV, 2 A, 21 OHM, TO-268HV, SURFACE MOUNT
Description
General part information
IXTT2 Series
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTT2N300P3HV |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 2 A |
| Drain to Source Voltage (Vdss) | 3000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 73 nC |
| Input Capacitance (Ciss) (Max) | 1890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 155 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268-3, TO-268AA |
| Package Name | TO-268HV (IXTT) |
| Power Dissipation (Max) | 520 W |
| Rds On (Max) | 21 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 5 V |
Pricing
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