SPP20N65C3XKSA1

Infineon Technologies

COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 200 MOHM;

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Infineon Technologies

COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 200 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	SPP20N65C3XKSA1

Current - Continuous Drain (Id) @ 25°C	20.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Power Dissipation (Max)
Infineon Technologies SPP20N65C3XKSA1	MOSFET (Metal Oxide)	114 nC	-55 °C	150 °C	650 V	20.7 A	3.9 V	190 mOhm	20 V	2400 pF	TO-220-3	N-Channel	10 V	PG-TO220-3	Through Hole	208 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001.Replacement for 650V CoolMOS™ C3 isCoolMOS™ P7.

Technical documentation and resources