DMP3037LSSQ-13

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3037LSSQ-13

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	969 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

P-Channel Enhancement Mode MOSFET

Part	Grade	Qualification	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]
Diodes Inc DMP3037LSSQ-13	Automotive	AEC-Q101	5.8 A	4.5 V 10 V	969 pF	32 mOhm	Surface Mount	30 V	P-Channel	8-SO	MOSFET (Metal Oxide)	20 V	2.4 V	17.3 nC	-55 °C	150 °C	1.2 W	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Technical documentation and resources