FZT857QTA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3.5A I(C), 300V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3.5A I(C), 300V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

Technical Specifications

Parameters and characteristics for this part

Specification	FZT857QTA

Current - Collector (Ic) (Max) [Max]	3.5 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.6 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	345 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

NPN, 300V, 3.5A, SOT223

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Diodes Inc FZT857TC	50 nA	3 W	SOT-223-3	100 hFE	NPN	TO-261-4 TO-261AA	345 mV	3.5 A	300 V	-55 °C	150 °C	Surface Mount
Diodes Inc FZT857QTA	50 nA	1.6 W	SOT-223-3	100 hFE	NPN	TO-261-4 TO-261AA	345 mV	3.5 A	300 V	-55 °C	150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 300V, 3.5A, SOT223

Technical documentation and resources