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DMS3014SFGQ-7 - PowerDI3333-8

DMS3014SFGQ-7

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

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DMS3014SFGQ-7 - PowerDI3333-8

DMS3014SFGQ-7

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMS3014SFGQ-7
Current - Continuous Drain (Id) @ 25°C9.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]19.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4310 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1 W
QualificationAEC-Q101
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.65
10$ 0.56
100$ 0.39
500$ 0.33
1000$ 0.28
Digi-Reel® 1$ 0.65
10$ 0.56
100$ 0.39
500$ 0.33
1000$ 0.28
Tape & Reel (TR) 2000$ 0.22

Description

General part information

DMS3014SFGQ Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.