STPS660DDJFY-TR
ActiveSTMicroelectronics
DIODE ARR SCHOTTKY 60V POWERFLAT
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STPS660DDJFY-TR
ActiveSTMicroelectronics
DIODE ARR SCHOTTKY 60V POWERFLAT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STPS660DDJFY-TR |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 3.5 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Diode Configuration | 2 Independent |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | 8-PowerVDFN |
| Qualification | AEC-Q101 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STPS660CSFY Series
The STPS660CSFY has been developed for applications requiring an optimized VF and leakage current characteristics.
These characteristics make it ideal for use in secondary rectification functions, such as DC/DC converters or freewheeling functions.
Documents
Technical documentation and resources
No documents available