STW43NM50N

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STMicroelectronics

MOSFET N-CH 500V 37A TO247-3

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STMicroelectronics

MOSFET N-CH 500V 37A TO247-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW43NM50N	STW43N Series

Current - Continuous Drain (Id) @ 25°C	37 A	35 - 37 A
Drain to Source Voltage (Vdss)	500 V	500 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC	140 - 145 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF	4200 pF
Input Capacitance (Ciss) (Max) @ Vds	-	4300 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	255 W	255 W
Rds On (Max) @ Id, Vgs	85 mOhm	85 - 88 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

MOSFET N-CH 600V 35A TO247-3

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW43NM60ND	145 nC	25 V	255 W	5 V	TO-247-3	600 V	150 °C	88 mOhm	TO-247-3	35 A	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	4300 pF
STMicroelectronics STW43NM50N	140 nC	25 V	255 W	4 V	TO-247-3	500 V	150 °C	85 mOhm	TO-247-3	37 A	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel		4200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 37A (Tc) 255W (Tc) Through Hole TO-247-3

Technical documentation and resources