STW43NM50N

Obsolete

STMicroelectronics

MOSFET N-CH 500V 37A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 37A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW43NM50N

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case
STMicroelectronics STW43NM50N	37 A	25 V	4 V	10 V	Through Hole	MOSFET (Metal Oxide)	4200 pF	N-Channel	85 mOhm	140 nC	TO-247-3	150 °C	500 V	255 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 37A (Tc) 255W (Tc) Through Hole TO-247-3

Technical documentation and resources