IDW80C65D2XKSA1
ActiveInfineon Technologies
THE IDW80C65D2 IS A 650 V IGBT SILICON POWER DIODE IN TO-247 PACKAGE
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IDW80C65D2XKSA1
ActiveInfineon Technologies
THE IDW80C65D2 IS A 650 V IGBT SILICON POWER DIODE IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDW80C65D2XKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 40 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 36 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PG-TO247-3 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDW80C65 Series
Rapid 2switching 650 V, 80 A emitter controlledpower silicon diodesin common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
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Technical documentation and resources