STPSC16H065AW
Active650 V, 16 A SINGLE HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
Deep-Dive with AI
Search across all available documentation for this part.
STPSC16H065AW
Active650 V, 16 A SINGLE HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
Deep-Dive with AI
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 600 | $ 3.27 | |
| 1200 | $ 2.80 | |||
| 3000 | $ 2.64 | |||
Description
General part information
STPSC16H065A Series
The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.