STPSC16H065AW
Active650 V, 16 A SINGLE HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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STPSC16H065AW
Active650 V, 16 A SINGLE HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC16H065AW |
|---|---|
| Capacitance @ Vr, F | 750 pF |
| Current - Average Rectified (Io) | 16 A |
| Current - Reverse Leakage @ Vr | 140 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 600 | $ 3.27 | |
| 1200 | $ 2.80 | |||
| 3000 | $ 2.64 | |||
Description
General part information
STPSC16H065A Series
The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.