IXFT52N50P2

Obsolete

IXYS

MOSFET N-CH 500V 52A TO268

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Obsolete

IXYS

MOSFET N-CH 500V 52A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT52N50P2

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	113 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	960 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFT52N50P2	TO-268AA	N-Channel	500 V	MOSFET (Metal Oxide)	960 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	6800 pF	4.5 V	30 V	10 V	113 nC	52 A	120 mOhm	-55 °C	150 °C	Surface Mount
IXYS IXFT52N30Q	TO-268AA	N-Channel	300 V	MOSFET (Metal Oxide)	360 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5300 pF		20 V	10 V		52 A	60 mOhm	-55 °C	150 °C	Surface Mount	4 V	150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 52A (Tc) 960W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available