Technical Specifications
Parameters and characteristics for this part
| Specification | STL6N2VH5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-PowerWDFN |
| Power Dissipation (Max) | 2.4 W |
| Rds On (Max) @ Id, Vgs [Max] | 30 mOhm |
| Supplier Device Package | PowerFlat™ (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 700 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL6N2VH5 Series
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Documents
Technical documentation and resources
TN1225
Technical Notes & ArticlesFlyers
