STW9N80K5

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STMicroelectronics

MOS POWER TRANSISTORS HV (>= 200V)

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STMicroelectronics

MOS POWER TRANSISTORS HV (>= 200V)

Technical Specifications

Parameters and characteristics for this part

Specification	STW9N80K5

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
STMicroelectronics STW9N80K5	800 V	N-Channel	5 V	30 V	TO-247-3	110 W	10 V	340 pF	Through Hole	12 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	900 mOhm	7 A	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 7A (Tc) 110W (Tc) Through Hole TO-247-3

Technical documentation and resources