IPW65R150CFDFKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 150 MOHM; FAST RECOVERY DIODE

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IPW65R150CFDFKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 150 MOHM; FAST RECOVERY DIODE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R150CFDFKSA1

Current - Continuous Drain (Id) @ 25°C	22.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	195.3 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW65R150 Series

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)
Infineon Technologies IPW65R150CFDFKSA1	4.5 V	TO-247-3	20 V	22.4 A	MOSFET (Metal Oxide)	PG-TO247-3	10 V	2340 pF	N-Channel	150 mOhm	-55 °C	150 °C	86 nC	650 V	Through Hole	195.3 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPW65R150 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources