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STW35N60DM2 - STMICROELECTRONICS STW20N95DK5

STW35N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-247 PACKAGE

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STW35N60DM2 - STMICROELECTRONICS STW20N95DK5

STW35N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-247 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW35N60DM2
Current - Continuous Drain (Id) @ 25°C28 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)210 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 30$ 5.03
90$ 4.50
300$ 4.24
750$ 3.97
1500$ 3.57
NewarkEach 1$ 7.88
10$ 7.01
25$ 5.48
50$ 5.23
100$ 5.03

Description

General part information

STW35N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.