1SS193S,LF(D

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	1SS193S,LF(D

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	S-Mini
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Mounting Type	Technology	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Speed	Speed	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS193,LF	Surface Mount	Standard	S-Mini	3 pF	100 mA	SC-59 SOT-23-3 TO-236-3	4 ns	Any Speed	200 mA	125 °C	80 V	500 nA
Toshiba Semiconductor and Storage 1SS193S,LF(D	Surface Mount	Standard	S-Mini	3 pF	100 mA	SC-59 SOT-23-3 TO-236-3	4 ns	Any Speed	200 mA	125 °C	80 V	500 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 100mA Surface Mount S-Mini

Technical documentation and resources

No documents available