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1SS193,LF - SOT-23-3

1SS193,LF

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

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1SS193,LF - SOT-23-3

1SS193,LF

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS193,LF
Capacitance @ Vr, F3 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr500 nA
Mounting TypeSurface Mount
Operating Temperature - Junction125 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)4 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageS-Mini
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Digi-Reel® 1$ 0.19
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02

Description

General part information

1SS193 Series

Diode 80 V 100mA Surface Mount S-Mini

Documents

Technical documentation and resources