1SS193S,LF(D

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1SS193S,LF(D	1SS193 Series

Capacitance @ Vr, F	3 pF	3 pF
Current - Average Rectified (Io)	100 mA	100 mA
Current - Reverse Leakage @ Vr	500 nA	500 nA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction	125 °C	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns	4 ns
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	S-Mini	S-Mini
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V	80 V

DIODE GEN PURP 80V 100MA S-MINI

Part	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Speed	Mounting Type	Current - Average Rectified (Io)
Toshiba Semiconductor and Storage 1SS193S,LF(D	Standard	SC-59, SOT-23-3, TO-236-3	80 V	S-Mini	125 °C	500 nA	4 ns	3 pF	Any Speed	200 mA	Surface Mount	100 mA
Toshiba Semiconductor and Storage 1SS193,LF	Standard	SC-59, SOT-23-3, TO-236-3	80 V	S-Mini	125 °C	500 nA	4 ns	3 pF	Any Speed	200 mA	Surface Mount	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 100mA Surface Mount S-Mini

Technical documentation and resources

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