IGW30N60TFKSA1

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Infineon Technologies

THE IGW30N60T IS A 600 V, 30 A IGBT DISCRETE IN TO-247 PACKAGE

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DocumentsTechnical Data Sheet EN

IGW30N60TFKSA1

Active

Infineon Technologies

THE IGW30N60T IS A 600 V, 30 A IGBT DISCRETE IN TO-247 PACKAGE

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DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGW30N60TFKSA1

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	90 A
Gate Charge	167 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	187 W
Supplier Device Package	PG-TO247-3-1
Td (on/off) @ 25°C	254 ns
Td (on/off) @ 25°C	23 ns
Test Condition	10.6 Ohm, 400 V, 30 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGW30N Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Gate Charge	IGBT Type	Power - Max [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C
Infineon Technologies IGW30N60TFKSA1	-40 C	175 °C	PG-TO247-3-1	Through Hole	TO-247-3	60 A	600 V	90 A	167 nC	Trench Field Stop	187 W	10.6 Ohm 15 V 30 A 400 V	2.05 V	254 ns	23 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.10
		30	$ 2.26
		120	$ 1.85
		510	$ 1.55
		1020	$ 1.44
		2010	$ 1.39
Newark	Each	1	$ 3.38
		10	$ 2.70
		25	$ 2.03
		50	$ 1.90
		100	$ 1.78
		480	$ 1.77
		720	$ 1.41

Description

General part information

IGW30N Series

The IGW30N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet