STF10P6F6

Obsolete

STMicroelectronics

MOSFET, P-CH, -60V, -10A, 175DEG C, 20W

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Obsolete

STMicroelectronics

MOSFET, P-CH, -60V, -10A, 175DEG C, 20W

Technical Specifications

Parameters and characteristics for this part

Specification	STF10P6F6

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
STMicroelectronics STF10P6F6	Through Hole	4 V	6.4 nC	20 W	TO-220-3 Full Pack	160 mOhm	TO-220FP	60 V	10 V	340 pF	MOSFET (Metal Oxide)	P-Channel	20 V	10 A	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 1.37

General part information

P-Channel 60 V 10A (Tc) 20W (Tc) Through Hole TO-220FP

Technical documentation and resources