DN2540N3-G-P003
Active400V, 25 OHM, N-CHANNEL, DEPLETION MODE, VERTICAL DMOS FET
DN2540N3-G-P003
Active400V, 25 OHM, N-CHANNEL, DEPLETION MODE, VERTICAL DMOS FET
Description
General part information
DN2540 Series
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Technical Specifications
Parameters and characteristics for this part
| Specification | DN2540N3-G-P003 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 120 mA |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | Depletion Mode, N-Channel |
| Input Capacitance (Ciss) (Max) | 300 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92 (TO-226) |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) | 25 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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