G180N06S2

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MOSFET 2N-CH 60V 8A 8SOP

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MOSFET 2N-CH 60V 8A 8SOP

Description

General part information

Mosfet Array 60V 8A (Tc) 2W (Tc) Surface Mount 8-SOP

Parameters and characteristics for this part

Specification	G180N06S2

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	58 nC, 58 nC
Input Capacitance (Ciss) (Max)	2330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	2 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

Part	Package Length	Package Name	Package Width	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Rds On (Max)	Power - Max (Tc)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)
Goford Semiconductor G180N06S2	0.154 in	8-SOIC 8-SOP	3.9 mm	58 nC 58 nC	2	N-Channel	Dual	2330 pF	8 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	20 mOhm	2 W	2.4 V	60 V

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