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TC4422AVOA713-VAO - SOIC / 8

TC4422AVOA713-VAO

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Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

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TC4422AVOA713-VAO - SOIC / 8

TC4422AVOA713-VAO

Active
Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC4422AVOA713-VAOTC4422 Series
--
Channel TypeSingleSingle
Current - Peak Output (Source, Sink) [custom]10 A9 - 10 A
Current - Peak Output (Source, Sink) [custom]10 A9 - 10 A
Driven ConfigurationLow-SideLow-Side
Gate TypeMOSFET (N-Channel, P-Channel), IGBTMOSFET (N-Channel, P-Channel), IGBT
GradeAutomotiveAutomotive
Input TypeNon-InvertingNon-Inverting
Mounting TypeSurface MountSurface Mount, Through Hole
Number of Drivers11
Operating Temperature [Max]125 °C125 - 150 °C
Operating Temperature [Min]-40 °C-55 - 0 °C
Package / Case8-SOIC8-VDFN Exposed Pad, TO-220-5, 8-CDIP, 8-DIP, 8-SOIC
Package / Case-7.62 mm
Package / Case-0.3 in
Package / Case [x]0.154 in0.154 - 0.209 in
Package / Case [y]3.9 mm3.9 - 5.3 mm
QualificationAEC-Q100AEC-Q100
Rise / Fall Time (Typ)-60 ns
Rise / Fall Time (Typ)-60 ns
Rise / Fall Time (Typ) [custom]33 ns33 ns
Rise / Fall Time (Typ) [custom]38 ns38 ns
Supplier Device Package8-SOIC8-DFN-S (6x5), TO-220-5, 8-CERDIP, 8-PDIP, 8-SOIC, 8-SOIJ
Voltage - Supply [Max]18 V18 V
Voltage - Supply [Min]4.5 V4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectT/R 1$ 2.46
25$ 2.06
100$ 1.88
1000$ 1.81
5000$ 1.80

TC4422 Series

9 A MOSFET Gate Driver

PartPackage / CaseSupplier Device PackageChannel TypeInput TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Voltage - Supply [Max]Voltage - Supply [Min]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Number of DriversDriven ConfigurationMounting TypeOperating Temperature [Max]Operating Temperature [Min]Package / CasePackage / CaseRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Package / Case [y]Package / Case [x]Gate TypeQualificationGrade
Microchip Technology
TC4422EMF
Microchip Technology
TC4422AVMF713
Microchip Technology
TC4422EPA
Microchip Technology
TC4422EMF713
8-VDFN Exposed Pad
8-DFN-S (6x5)
Single
Non-Inverting
60 ns
60 ns
18 V
4.5 V
9 A
9 A
1
Low-Side
Surface Mount
150 °C
-40 °C
Microchip Technology
TC4422VMF
8-VDFN Exposed Pad
8-DFN-S (6x5)
Single
Non-Inverting
60 ns
60 ns
18 V
4.5 V
9 A
9 A
1
Low-Side
Surface Mount
150 °C
-40 °C
Microchip Technology
TC4422MJA
Microchip Technology
TC4422AVOA
Microchip Technology
TC4422CAT
TO-220-5
TO-220-5
Single
Non-Inverting
60 ns
60 ns
18 V
4.5 V
9 A
9 A
1
Low-Side
Through Hole
150 °C
0 °C
Microchip Technology
TC4422MJA
8-CDIP
8-CERDIP
Single
Non-Inverting
60 ns
60 ns
18 V
4.5 V
9 A
9 A
1
Low-Side
Through Hole
150 °C
-55 °C
7.62 mm
0.3 in
Microchip Technology
TC4422AVMF713
8-VDFN Exposed Pad
8-DFN-S (6x5)
Single
Non-Inverting
18 V
4.5 V
10 A
10 A
1
Low-Side
Surface Mount
150 °C
-40 °C
33 ns
38 ns

Description

General part information

TC4422 Series

The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.

These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.

The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET gate drivers fit into most any application where high gate/line capacitance drive is required.